Polarized radiation source using spin extraction/injection

Details Polarized radiation source using spin extraction/injection Polarized radiation source using spin extraction/injection

2007-04-24

2007-04-24

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

C257S295000, C257SE33068

Reexamination Certificate

active

11061060

ABSTRACT:
Spin-polarized electrons can be efficiently extracted from an n-doped semiconductor layer (n-S) by forming a modified Schottky contact with a ferromagnetic material (FM) and a δ-doped layer at an interface under forward bias voltage conditions. Due to spin-selection property of the FM-S junction, spin-polarized carriers appear in the n-doped semiconductor layer near the FM-S interface. If a FM-n-n′-p heterostructure is formed, where the n′ region is a narrower gap semiconductor, polarized electrons from the n-S region and holes from the p-S region can diffuse into the n′-S region under the influence of independent voltages applied between the FM and n′ regions and the n′ and p regions. The polarized electrons and holes recombine in the n′-S region and produce polarized light. The polarization can be controlled and modulated by controlling the applied voltages.

REFERENCES:
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patent: 2004/0179567 (2004-09-01), Osipov et al.
Bland, J.A.C. et al., “Spin selective transport at the ferromagnet/ semiconductor interface” Current Applied Physics 3 (2003) 429-432.
Gregg, J.F. et al., “Spin Electronics—a review” Journal of Physics D: Applied Physics 35 (2002) R121-R155.
Jonker, B.T. et al., “Electrical Spin Injection and Transport in Semiconductor Spintronic Devices” MRS Bulletin (Oct. 2003) 740-748.
Pearton, S.J. et al., “Recent Advances in Gate Dielectrics and Polarised Light Emission From GaN” OptoElectronics Review 10(4) (2002) 231-236.
Yu, Z.G. et al., “Circularly Polarized Electroluminescence in spin-LED Structures” arXiv:cond-mat/0308220 v1 (Aug. 12, 2003) 1-5.

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