Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2008-01-23
2010-10-19
Nguyen, Dao H (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S096000, C257S099000, C257SE33067, C257SE33068, C257SE33069, C372S050110, C372S050120, C372S096000, C438S032000
Reexamination Certificate
active
07816699
ABSTRACT:
Disclosed is a polarized light emitting diode (LED) capable of emitting polarized light in the front direction thereof by forming a first grating layer on a quantum well layer and forming a second grating layer on a substrate. The polarized LED includes a nitride thin film formed on a substrate, a quantum well layer formed on the nitride thin film, a first grating layer formed on the quantum well layer to allow a part of light generated from the quantum well layer to pass through the first grating layer and to reflect remaining light, and a second grating layer formed on the substrate to rotate the light reflected from the first grating layer such that the reflected light passes through the first grating layer.
REFERENCES:
patent: 2008/0128728 (2008-06-01), Nemchuk et al.
patent: 2008/0267236 (2008-10-01), Sigalas et al.
patent: 2009/0067774 (2009-03-01), Magnusson
patent: 10-2007-0079833 (2007-08-01), None
Choi Won-Jun
Jeon Heon-Su
Park Q-Han
Korea University Industrial & Academic Collaboration Founda
Locke Lord Bissell & Liddell LLP
Nguyen Dao H
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