Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2007-01-16
2010-06-29
Nguyen, Cuong Q (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S021000, C257S098000
Reexamination Certificate
active
07745815
ABSTRACT:
A quantum well infrared photodetector (QWIP) focal plane array having structures, each structure having stacked layers of quantum wells and a reflective grating to provide polarization sensitivity. The reflective grating is etched to provide electrical contacts for individual pixels. The reflective gratings comprise grooves, where the grooves for a particular structure run in a particular direction to provide polarization sensitivity. Each structure may comprise groups of quantum well layers, each group sensitive to a particular frequency band. By shorting out unwanted quantum well layers, and by forming the reflective gratings to come into contact with the quantum well layers having a particular frequency band sensitivity, the pixels in the QWIP focal plane array may provide frequency and polarization information.
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Gunapala, Sarath , “1024×1024 Pixel Mid-Wavelength and Long-Wavelength Infrared QWIP Focal Place Arrays for Imaging Applications”,Semiconductor Science and Technology, Mar. 23, 2005,473-480.
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Bandara Sumith V.
Gunapala Sarath
Liu John K.
California Institute of Technology
Nguyen Cuong Q
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