Polarization-sensitive near-field microwave microscope

Details Polarization-sensitive near-field microwave microscope Polarization-sensitive near-field microwave microscope

1998-07-08

2000-08-08

Metjahic, Safet

Electricity: measuring and testing

Impedance, admittance or other quantities representative of...

Distributive type parameters

324632, 324633, 333 21A, G01R 2704

Patent

active

06100703&

ABSTRACT:
A microwave microscope for measuring electrical characteristics of a sample, such as a semiconductor wafer, with fine resolution. A probe includes a microwave waveguide capable of supporting the two lowest orthogonal modes from a microwave source, e.g. of millimeter radiation. The probe tip includes a thin conductive wall formed at the probe end of the probe. Two perpendicularly arranged slits, that is cross slits, are formed in the conductive wall, each slit having a length nearly resonant with the microwave radiation and a width substantially smaller, e.g. of the order of 100 .mu.m, and of a size such that the radiation of the proper polarization nearly transparently passes through that slit. The sample to be tested is placed in the near field of the probe tip and scanned relative to the probe. Probing microwave radiation having the polarization which passes through one slit is launched in the waveguide. A non-rotated polarization component is reflected back from the sample through the same slit. A rotated polarization component is reflected back through the other slit. Microwave techniques are used to separately measure the two components and, if desired, their magnitudes and phases. The rotated component is particularly useful for mapping Hall mobilities, anisotropies, and local non-uniformities.

REFERENCES:
patent: 3093825 (1963-06-01), Allen
patent: 3697898 (1972-10-01), Blachier
patent: 4344030 (1982-08-01), Anderson
patent: 4500835 (1985-02-01), Heikkila
Mittleman, et al. "Noncontact semiconductor wafer characterization with the terahertz Hall effect" Applied Physics Letters, vol. 71 (1), Jul. 7, 19 pp. 16-18.
C. Druon et al. "Novel microwave device nondestructive electrical characterization of semiconduction layers", Review Scientific Instruments, vol. 61 (11), Nov. 1990, pp. 3431-3434.

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