Polarization mode switching semiconductor laser apparatus

Details Polarization mode switching semiconductor laser apparatus Polarization mode switching semiconductor laser apparatus

1993-01-27

1996-03-05

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 27, 372 45, 372 46, H01S 319

Patent

active

054973902

ABSTRACT:
A semiconductor laser apparatus includes a semiconductor substrate, a first cladding layer, an active layer, a second cladding layer, a second electrode, and a pair of resonator mirrors. The semiconductor substrate has a first electrode on one surface. The first cladding layer is formed on the other surface of the semiconductor substrate. The active layer is placed on the cladding layer. The second cladding layer is placed on the active layer. The second electrode is placed on the second cladding layer. The pair of resonator mirrors are placed in a waveguide direction perpendicular to the surfaces of the semiconductor substrate to oppose each other. The active layer is constituted by a quantum well layer having a tensilely strain. The second electrode is separated into portions not less than two portions.

REFERENCES:
patent: 5012474 (1991-04-01), White et al.
patent: 5079774 (1992-01-01), Mendez et al.
patent: 5319659 (1994-06-01), Hohimer
Y. Mitsuhashi, "Polarization control of an antireflection-coated GaAIAs laser diode by an external optical feedback", J. Appl. Phys. 53(12), Dec. 1982, pp. 9200-9201.
M. J. B. Boermans et. al., "Investication of TE and TM Polarised Laser Emission in GaInP/AIGaInP Lasers By Growth-Controlled Strain", Electronics Letters, 30th Aug. 1990, vol. 26 No. 18, pp. 1438-1439.

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