Polarization-mode selective semiconductor laser with a bending c

Details Polarization-mode selective semiconductor laser with a bending c Polarization-mode selective semiconductor laser with a bending c

1997-07-29

1999-12-28

Sanghav, Hemang

Miscellaneous active electrical nonlinear devices, circuits, and

Specific signal discriminating without subsequent control

By amplitude

372 45, 372 50, 372102, 372 27, H01S 308

Patent

active

060086750

ABSTRACT:
A polarization-mode selective semiconductor laser includes a semiconductor laser structure including an active layer for generating gain spectra for the first and second different polarization modes and a diffraction grating formed with a uniform pitch over the laser structure. The laser structure includes a first DFB reflector portion with a first channel stripe and a second DFB reflector portion with a second channel stripe connected to the first stripe channel. The first DFB reflector portion and the second DFB reflector portion is serially arranged in a cavity direction of the laser. The first and second stripe channels are bent relative to each other such that a Bragg wavelength for the first polarization mode is coincident with a gain peak wavelength for the first polarization mode in the first DFB reflector portion, to make the first polarization mode dominant in the first DFB reflector portion, and that a Bragg wavelength for the second polarization mode is coincident with a gain peak wavelength for the second polarization mode in the second DFB reflector portion, to make the second polarization mode dominant in the second DFB reflector portion.

REFERENCES:
patent: 5239410 (1993-08-01), Nishimura et al.
patent: 5784399 (1998-07-01), Sun
patent: 5822352 (1998-10-01), Mizutani et al.
patent: 5926497 (1999-07-01), Nitta et al.
patent: 5946336 (1999-08-01), Mizutani et al.

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