Polarization insensitive semiconductor optical amplifier and an

Coherent light generators – Particular active media – Semiconductor

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359344, 359485, 359122, 359156, 385 11, 372 27, 257 18, H01S 319, H04B 1012, G02B 612

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active

053881176

ABSTRACT:
A polarization insensitive optical amplifying apparatus having a semiconductor laser structure, and serving as an amplifier for imparting a gain to input light from outside the apparatus. In the optical amplifying apparatus, a second semiconductor layer is formed on at least a first semiconductor layer. The lattice constant of the second semiconductor layer is less than the lattice constant of the first semiconductor layer. The second semiconductor layer undergoes a biaxial tensile stress due to a lattice mismatch between the first and second semiconductor layers, and serves as a well layer of an active layer having a quantum well structure. A third semiconductor layer is also formed on at least the first semiconductor layer. The lattice constant of the third semiconductor layer is less than the lattice constant of the first semiconductor layer. The third semiconductor layer also undergoes a biaxial tensile stress due to a lattice mismatch between the first and third semiconductor layers, and serves as a barrier layer of the active layer having the quantum well structure.

REFERENCES:
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patent: 5334854 (1994-08-01), Ono et al.
Magari, et al., "1.55 .mu.m Polarization-Insensitive High-Gain Tensile-Strained-Barrier MQW Optical Amplifier," IEEE Photonics Technology, Letters, Dec. 3, 1991, No. 11.
Joma, et al., "Polarization insensitive semiconductor laser amplifiers with tensile strained InGaAsP/InGaAsP multiple quantum well structure," Applied Physics Letters, 62 Jan. 11, 1993, No. 2.
Yaguchi, et al., "Photoreflectance Study of GaAs/GaAsP Strained-Barrier Quantum Well Structures," Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials, 1992, pp. 589-591 No Month.

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