Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1998-03-24
2000-06-13
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 18, 257184, 359245, 359248, H01L 29205, H01L 310304
Patent
active
060752548
ABSTRACT:
A semiconductor waveguide modulator that is polarization insensitive/independent at bias variations for any chosen wavelength. The modulator of the present invention employs a novel type of strained semiconductor quantum well (QW) structure that exhibits bias independent, heavy-hole and light hole degeneracy. This effect is achieved by inserting one or two thin layers of highly tensile, strained materials in a specific position within the QW. By adjusting the thickness and the position of the highly tensile strained layers, the quantum confined Stark effect (QCSE) for the heavy hole and light hole can be engineered separately to control the bias dependent polarization properties. The present invention has applications, for example, in optoelectronic devices in the areas of telecommunications, optical signal processing, scanning and displays.
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Chen, Y. et al., "Polarization Independent Strained InGaAs/InGaAlAs Quantum-Well Phase Modulators," IEEE Photonics Technology Letters, vol. 4, No. 10, 1120 (Oct. 1992).
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Dutta Mitra
Pamulapati Jagadeesh
Shen Paul H.
Jackson, Jr. Jerome
Tereschuk George B.
The United States of America as represented by the Secretary of
Zelenka Michael
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