Polarization-independent semiconductor waveguide

Details Polarization-independent semiconductor waveguide Polarization-independent semiconductor waveguide

1990-06-29

1992-02-25

Jackson, Jr., Jerome

Optical waveguides

Planar optical waveguide

Thin film optical waveguide

357 4, 357 16, 359246, 359483, 385 8, 385 14, H01L 29205, H01L 2914, G02B 612, G02B 530

Patent

active

050907905

ABSTRACT:
A polarization independent guided wave semiconductor device is realized wherein the waveguide region of the device includes one or more strained quantum well layers wherein strain is designed to be tensile in nature so that energy subbands in the quantum well or wells are displaced by a predetermined amount in a direction opposite to that for the quantum size effect. Polarization independence is achieved when, for a lightwave signal having an incident mean photon energy below the absorption bandedge of the strained quantum well layer or layers, the ratio of the oscillator strengths versus the wavelength detuning for heavy and light holes in a first polarization (TE) is substantially equal to a similar ratio computed in a second polarization (TM). Wavelength detuning is understood to be the difference between the wavelength of operation and the wavelength of an exciton resonance peak. Passive and active or actively controllable waveguides and waveguide devices are described.

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