Polarization independent semiconductor optical amplifier

Details Polarization independent semiconductor optical amplifier Polarization independent semiconductor optical amplifier

1989-03-14

1990-08-28

Lee, John D.

Amplifiers

Signal feedback

Combined with control of bias voltage of signal amplifier

330250, 372 19, 357 55, G02B 626, H03F 304, H01S 3098, H01L 2966

Patent

active

049520172

ABSTRACT:
In a fiber-optic communication system, a polarization independent semiconductor optical amplifier structure is achieved by tailoring the height-width aspect ratio of its active region to a value at least close to unity and at the same time using a laser cavity structure in which the end mirrors are buried in the semiconductor body in which the optical amplifier structure is built.

REFERENCES:
patent: 4625225 (1986-11-01), Goodfellow et al.
patent: 4772787 (1988-09-01), Trommer
IEE Proc., vol. 129, Pt. I, No. 6, Dec. 1982, "Formation of a Long-Wavelength Buried-Cresent Laser Structure on Channelled Substrates", D. L. Murrell et al., pp. 209-213.
Electronics Letters, vol. 24, No. 17, Aug. 18, 1988, "Polarisation-Independent Configuration Optical Amplifier," N. A. Olsson, pp. 1075-1076.
Electronics Letters, vol. 23, 1987, "Optical Amplifier Configurations with Low Polarization Sensitivity," G. Grosskopf et al., pp. 1387-1388.
IEEE Journal of Quantum Electronics, vol. QE-19, No. 6, Jun. 1983, "Distributed Feedback InGaAsP/InP Lasers with Window Region Emitting at 1.5 .mu.m Range", by Shigeyuki Akiba, Katsuyuki Utaka, K. Sakai and Y. Matsushima, pp. 1052-1056.
Journal of Optical Communications, vol. 4, No. 2, Jun. 1983, "Semiconductor Laser Amplifier for Single Mode Optical Fiber Communications," J. C. Simon, pp. 51-62.

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