Optical waveguides – With optical coupler – Particular coupling structure
Reexamination Certificate
2005-06-14
2005-06-14
Lee, John D. (Department: 2874)
Optical waveguides
With optical coupler
Particular coupling structure
C385S011000, C385S028000, C385S043000
Reexamination Certificate
active
06907169
ABSTRACT:
An optical signal may be received into orthogonal linearly polarized modes of a transmission optical waveguide, the transmission waveguide including first and second transverse-coupling segments thereof. Optical signal polarized along one polarization direction may be substantially completely transferred from the transmission waveguide into a first transverse-coupled waveguide, the first transverse-coupled waveguide being optically transverse-coupled to the first transverse-coupling segment of the transmission waveguide. Optical signal polarized along the other polarization direction may be substantially completely transferred from the transmission waveguide into a second transverse-coupled waveguide, the second transverse-coupled waveguide being optically transverse-coupled to the second transverse-coupling segment of the transmission waveguide. The optical signals carried by the first and second transverse-coupled waveguides may be combined into a single waveguide. The polarization directions of the transmission waveguide may be rotated about 90° between the first and second transverse-coupling segments.
REFERENCES:
patent: 3912363 (1975-10-01), Hammer
patent: 4097117 (1978-06-01), Neil et al.
patent: 4097118 (1978-06-01), Hammer
patent: 4142775 (1979-03-01), Ramaswamy et al.
patent: 5039192 (1991-08-01), Basu
patent: 5138676 (1992-08-01), Stowe et al.
patent: 5446579 (1995-08-01), Lomashevitch
patent: 5475704 (1995-12-01), Lomashevitch
patent: 5502783 (1996-03-01), Wu
patent: 5515461 (1996-05-01), Deri et al.
patent: 5703989 (1997-12-01), Khan et al.
patent: 5818980 (1998-10-01), Herrmann
patent: 5926496 (1999-07-01), Ho et al.
patent: 6009115 (1999-12-01), Ho
patent: 6031945 (2000-02-01), You et al.
patent: 6052495 (2000-04-01), Little et al.
patent: 6222964 (2001-04-01), Sadot et al.
patent: 6282219 (2001-08-01), Butler et al.
patent: 6310995 (2001-10-01), Saini et al.
patent: 6330378 (2001-12-01), Forrest et al.
patent: 6339607 (2002-01-01), Jiang et al.
patent: 6356694 (2002-03-01), Weber
patent: 6400856 (2002-06-01), Chin
patent: 6424669 (2002-07-01), Jiang et al.
patent: 6445724 (2002-09-01), Abeles
patent: 6507684 (2003-01-01), Tapalian et al.
patent: 6560259 (2003-05-01), Hwang
patent: 2002/0081055 (2002-06-01), Painter et al.
patent: 2002/0122615 (2002-09-01), Painter et al.
patent: 2003/0081902 (2003-05-01), Blauvelt et al.
patent: 2003/0235369 (2003-12-01), Grosjean et al.
F. Agahi, B. Pezeshki, J. A. Kash, and D. W. Kisker, “Asymmetric Fabry-Perot modulator with a waveguide geometry”, Electron. Lett. vol. 32(3) 210 (1996).
Carl Arft, Diego R. Yankelovich, Andre Knoesen, Erji Mao, and James S. Harris Jr., “In-line fiber evanescent field electrooptic modulators”, Journal of Nonlinear Optical Physics and Materials vol. 9(1) 79 (2000).
C. I. H. Ashby, M. M. Bridges, A. A. Allerman, B. E. Hammons, “Origin of the time dependence of wet oxidation of AIGaAs”, Appl. Phys. Lett. vol. 75(1) 73 (1999).
W. G. Bi and C. W. Tu, “Bowing parameter of the band-gap energy of GaNxAs1-x”, Appl. Phys. Lett. vol. 70(12) 1608 (1997).
P. Chavarkar, L. Zhao, S. Keller, A. Fisher, C. Zheng, J. S. Speck, and U. K. Mishra, “Strain relaxation of InxGa1-xAs during lateral oxidation of underlying AIAs layers”, Appl. Phys. Lett. vol. 75(15) 2253 (1999).
E. I. Chen, N. Holonyak, Jr., andM. J. Ries, “Planar disorder- and native-oxide-defined photopumped AIAs-GaAs superlattice minidisk lasers”, J. Appl. Phys. vol. 79(11) 8204 (1996).
K. D. Choquette, K. M. Geib, C. I. H. Ashby, R. D. Twesten, O. Blum, H. Q. Hou, D. M. Follstaedt, B. E. Hammons, D. Mathes, and R. Hull, “Advances in selective wet oxidation of AIGaAs alloys”, IEEE Journal of Selected Topics in Quantum Electronics vol. 3(3) 916 (1997).
R. H. Homg, D. S. Wuu, S.C. Wei, M. F. Huang, K.H. Chang, P.H. Liu and K. C. Lin “AlGaInP/AuBe/glass light emitting diodes fabricated by wafer-bonding technology”, Appl. Phys. Letts. vol. 75(2) 154 (1999).
D.L. Huffaker, H. Deng, Q. Deng, and D.G. Deppe, “Ring and stripe oxide-confined vertical-cavity surface-emitting lasers”, Appl. Phys. Lett., vol. 69(23), 3477 (1996).
B. Koley, F. G. Johnson, O. King, S. S. Saini, and M. Dagenais, “A method of highly efficient hydrolization oxidation of III-V semiconductor lattice matched to indium phosphide”, Appl. Phys. Lett. vol. 75(9) 1264 (1999).
M. Kondow, T. Kitatani, S. Nakatsuka, M. C. Larson, K. Nakahara, Y. Yazawa, M. Okai, and K. Uomi, “GaInNAs: A novel material for long-wavelength semiconductor lasers”, IEEE Journal of Selected Topics in Quantum Electronics, vol. 3(3), 719 (1997).
B.A. Little, S.T. Chu, H. A. Haus, J. Foresi, and J.-P. Laine, “Microring channel dropping filters”, J. Lightwave Technology vol. 15 998 (1997).
Y. Luo, D. C. Hall, L. Kou, L. Steingart, J. H. Jackson, O. Blum, and H. Hou, “Oxidized AlxGa1-xAs heterostructures planar waveguides”, Appl. Phys. Lett. vol. 75(20) 3078 (1999).
M. H. MacDougalP. D. Dapkus, A. E. Bond, C.-K. Lin, and J. Geske, “Design and fabrication of VCSEL's with AlxOy-GaAs DBR's”, IEEE Journal of Selected Topics in Quantum Electronics vol. 3(3) 905 (1997).
M. H. MacDougal, P. D. Dapkus, “Wavelength shift of selectively oxidized AlxOy-AlGaAs-GaAs distributed Bragg reflectors”, IEEE Photonics Tech. Lett. vol. 9(7) 884 (1997).
R. L. Naone and L. A. Coldren, “Surface energy model for the thickness dependence of the lateral oxidation of AlAs”, J. Appl. Phys. vol. 82(5) 2277 (1997).
N. Ohnoki, F. Koyama, and K. Iga, “Superlattice AlAs/AllnAs-oxide current aperture for long wavelength InP-based vertical-Cavity surface-emitting laser structure”, Appl. Phys. Lett. vol. 73(22) 3262 (1998).
N. Ohnoki, F. Koyama and K. Iga, “Super-lattice AlAs/AllnAs for lateral-oxide current confinement in InP-based lasers”, J. Crystal Growth vol. 195 603 (1998).
R. D. Pechstedt, P. St. J. Russell, T. A. Birks, and F. D. Lloyd-Lucas, “Selective coupling of fiber modes with use of surface-guided Bloch modes supported by dielctric multilayer stacks”, J. Opt. Soc. Am. A vol. 12(12) 2655 (1995).
R. D. Pechstedt, P. St. J. Russell, “ Narrow-band in-line fiber filter using surface-guided Bloch modes supported by dielectric multilayer stacks”, J. Lightwave Tech. vol. 14(6) 1541 (1996).
B. Pezeshki, J. A. Kash, D. W. Kisker, and F. Tong, “Multiple wavelength light source using an asymmetric waveguide coupler”, Appl. Phys. Lett. vol. 65(2) 138 (1994).
B. Pezeshki, J. A. Kash, D. W. Walker, and F. tong, “Wavelength sensitive tapered coupler with anti-resonant waveguides”, IEEE Phot. Tech. Lett. vol. 6(10) 1225 (1994).
B. Pezeshki, F. F. Tong, J. A. Kash, and D. W. Kisker, “Vertical cavity devices as wavelength selective waveguides”, J. Lightwave Tech. vol. 12(10) 1791 (1994).
B. Pezeshki, J. A. Kash, and F. Agahi, “Waveguide version of an asymmetric Fabry-Perot modulator”, Appl. Phys. Lett. vol. 67(12) 1662 (1995).
H. Saito, T. Makimoto, and N. Kobayashi, “MOVPE growth of strained InGaAsN/GaAs quantum wells”, J. Crystal Growth, vol. 195 416 (1998).
I.-H. Tan, C. Reaves, A. L. Holmes Jr., E. L. Hu, J. E. Bowers, and S. DenBaars, “Low-temperature bonding of III-V semiconductors”, Electronics Letters 31 588 (1995).
H. Wada and T. Kamijoh, “Effects of heat treatment on bonding properties in InP-to-Si direct wafer bonding”, Japanese Journal of Applied Physics Part 1 33 4878 (1994).
H. Wada, T. Kamijoh, and Y. Ogawa, “Direct bonding of InP to different materials for optical devices”, Proceedings of the 3rd International Symposium on Semiconductor Wafer Bonding Science, Technology, and Applications, 95-97 579, The Electrochemical Society (Pennington NJ, 1995).
H. Wada and T. Kamijoh, “Room-temperature cw operation of InGaAsP lasers on Si fabricated by wafer bon
Alavi David S.
Painter Oskar J.
Sercel Peter C.
Vahala Kerry J.
Vernooy David W.
Alavi David S.
Christie Parker & Hale LLP
Lee John D.
Xponent Photonics Inc
LandOfFree
Polarization-engineered transverse-optical-coupling... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Polarization-engineered transverse-optical-coupling..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Polarization-engineered transverse-optical-coupling... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3500014