Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is
Reexamination Certificate
2009-04-30
2011-11-22
Valentine, Jami M (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
C257SE31128, C257SE31033, C438S069000, C977S755000
Reexamination Certificate
active
08063396
ABSTRACT:
Devices, methods, and techniques for frequency-dependent optical switching are provided. In one embodiment, a device includes a substrate, a first and a second optical-field confining structures located on the substrate, and a quantum structure disposed between the first and the second optical-field confining structures. The first optical-field confining structure may include a surface to receive photons. The second optical-field confining structure may be spaced apart from the first optical-field confining structure. The first and the second optical-field confining structures may be configured to substantially confine therebetween an optical field of the photons.
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University of Seoul Industry Cooperation Foundation
Valentine Jami M
Workman Nydegger
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