PNPN switch device with capacitor formed outside active device a

Details PNPN switch device with capacitor formed outside active device a PNPN switch device with capacitor formed outside active device a

1985-06-04

1986-09-16

Clawson, Jr., Joseph E.

357 234, 357 30, 357 39, 357 51, 357 54, 357 59, 357 86, H01L 2974

Patent

active

046125620

ABSTRACT:
A PNPN switch device with a circuit for preventing an error due to a surge voltage. The circuit comprises two capacitors. The first capacitor is formed in a P-type gate region. The second capacitor of a capacitance of an insulation layer sandwiched between a MOS gate electrode and a capacitor electrode is provided outside the P-type gate region.

REFERENCES:
patent: 4244000 (1981-01-01), Ueda et al.
patent: 4489340 (1984-12-01), Ueda et al.
"An Optically Coupled High-Voltage PNPN Switch," vol. 48, No. 3, pp. 61-66.

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