Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Emitter region feature
Patent
1992-06-11
1994-05-31
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Emitter region feature
257173, 257168, 257132, 257152, H01L 29080, H01L 29740
Patent
active
053171721
ABSTRACT:
A PNPN semiconductor device has an inner P-type region which includes at least one ridge which extends into its outer N-type region and terminates short of the outer boundary of the outer N-type region, the inner P-type region includes a formation which is substantially level with the outer boundary of the outer N-type region, and the device includes a terminal which contacts the outer N-type region and the formation of the inner P-type region.
An alternative structure of the PNPN semiconductor device has an inner P-type region having at least one elongate sub-region, of higher conductivity than the remainder of the inner P-type region, lying along the junction between the inner P-type region and the outer N-type region, the formation which is substantially level with the outer boundary of the outer N-type region, and the terminal which contacts the formation and the outer N-type region.
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Baumann Russell E.
Donaldson Richard L.
Grossman Rene E.
Hardy David B.
Hille Rolf
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