PNPN semiconductor device

Details PNPN semiconductor device PNPN semiconductor device

1974-12-30

1976-06-29

Sikes, William L.

357 20, 357 39, 357 86, H01L 2974

Patent

active

039672948

ABSTRACT:
In a PNPN semiconductor device comprising a cathode base layer, a cathode emitter layer and an auxiliary emitter layer disposed on one of its main faces, an auxiliary electrode is disposed on the cathode base layer adjacent to a cathode electrode and a diode is formed in the cathode base layer between a gate electrode and the auxiliary electrode. The diode includes one semiconductor layer formed of the adjacent portion of the cathode base layer, an electrode connected to the gate electrode and a PN junction forwardly biased with a reverse bias applied to the gate electrode.

REFERENCES:
patent: 3794890 (1974-02-01), Weimann et al.
patent: 3896476 (1975-07-01), Kawakami
I.E.E.E. Conference Record of IAS 1973 Eighth Annual Meeting, E. Wolley et al., "Characteristics of a 200 AMP Gate Turn-Off Thyristor," pp. 251-255, Oct. 11, 1973.

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