PNPN integrated circuit protective device with integral resistor

Details PNPN integrated circuit protective device with integral resistor PNPN integrated circuit protective device with integral resistor

1985-01-23

1986-12-23

Clawson, Jr., Joseph E.

Electricity: electrical systems and devices

Safety and protection of systems and devices

With specific current responsive fault sensor

357 2313, 357 51, 357 46, 357 86, 361 56, 361 91, H01L 2974

Patent

active

046315675

ABSTRACT:
A semiconductor device comprises an internal circuit and an electrostatic destruction preventing circuit connected between a predetermined electrical potential point and a signal input terminal with respect to the internal circuit. The electrostatic destruction preventing circuit comprises a PNP-transistor having its emitter connected to the predetermined electrical potential point, an NPN-transistor having its emitter connected to said signal input terminal and said internal circuit, collector connected to the base of the PNP-transistor, and base connected to the collector of said PNP-transistor, and a resistor connected between the base of the PNP-transistor and the base of the NPN-transistor.

REFERENCES:
patent: 3664893 (1972-05-01), Frazee
patent: 3795828 (1974-03-01), Cavaliere et al.
patent: 3990092 (1976-11-01), Yoshimura
patent: 4321524 (1982-03-01), Petrovic
D. Goldthorp et al., "An Integrated Circuit Composite PNPN Diode," IEEE IEDM, Dec. 3-5, 1979, pp. 180-183.
W. Davis, "Bipolar Design Considerations for the Automative Environ.," IEEE J. of S.-S., Ckts., vol. SC-8 #6, Dec. 1973, pp. 419-426.

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