Pnp-type bipolar transistor

Details Pnp-type bipolar transistor Pnp-type bipolar transistor

1996-06-03

1998-07-07

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Lateral bipolar transistor structure

257591, H01L 2900

Patent

active

057773769

ABSTRACT:
A pnp-type bipolar transistor includes a highly dop p-conducting emitter zone, a base zone and a buried n-conducting zone below the emitter zone. An additional p-conducting region is connected to the highly doped emitter zone and is disposed between the highly doped emitter zone and the buried zone. A collector zone includes a highly doped collector connection zone and a p-conducting region reaching from the collector connection zone to the buried zone.

REFERENCES:
patent: 3524113 (1970-08-01), Agusta et al.
patent: 3667006 (1972-05-01), Ruegg
patent: 4196440 (1980-04-01), Anantha et al.
patent: 5347156 (1994-09-01), Sakaue

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