PN-junction with guard ring

Details PN-junction with guard ring PN-junction with guard ring

1991-01-28

1992-03-03

James, Andrew J.

357 37, 357 52, 357 90, H01L 2990

Patent

active

050936930

ABSTRACT:
In a semiconductor component, a pn junction which emerges at a main surface (2) of a semiconductor substrate (1) at the edge of a highly doped zone (3) is formed by a laterally bounded, highly doped zone (3) extending inwards from a main surface (2) of the semiconductor substrate (1) and by a lightly doped zone surrounding the highly doped zone. The edge of the highly doped zone (3) is formed by a guard zone (6b) whose doping density gradually decreases in a direction parallel to the main surface (2) from the highly doped zone (3) towards the pn junction. Any surface breakdown of the pn junction is prevented by the fact that the guard zone (6b) has a maximum penetration depth near the highly doped zone (3) and that the maximum penetration depth of the guard zone (6b) is greater than the penetration depth of the adjacent highly doped zone (3). The guard zone (6b) has a maximum doping density which does not appreciably exceed 10.sup.15 cm.sup.-3, a width which is comparable with a thickness of the slightly doped zone and a maximum penetration depth which is between 40 .mu.m and 80 .mu.m. The doping density of the guard zone (6b) decreases approximately linearly or stepwise in a direction parallel to the main surface (2).

REFERENCES:
patent: 3607449 (1971-09-01), Tokuyama et al.
patent: 4017888 (1977-04-01), Christie et al.
patent: 4638551 (1987-01-01), Einthoven
patent: 4651187 (1987-03-01), Sugimoto et al.
patent: 4742377 (1988-05-01), Einthoven
patent: 4774560 (1988-09-01), Coe
patent: 4805004 (1989-02-01), Gandolfi et al.
S. M. Sze, Semiconductor Devices: Physics and Technology, 1985, pp. 410-411.
Variation of Lateral Doping--A New Concept to Avoid High Voltage Breakdown of Planar Junctions by R. Stengl and U. Gosele, IEEE, 1985, pp. 154-157.
Methods of Avoiding Edge Effects on Semiconductor Diodes by P. A. Tove, J. Physics. D: Appl. Phys, 15 (1982), pp. 517-536.

Affiliated with

Also associated with

Rating

PN-junction with guard ring does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with PN-junction with guard ring, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and PN-junction with guard ring will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-275322