PN junction passivation using methylated silyloxy groups

Details PN junction passivation using methylated silyloxy groups PN junction passivation using methylated silyloxy groups

1988-09-26

1990-07-10

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437228, 437235, 437238, 437239, 437 96, 437 99, 357 8, 357 52, 357 72, H01L 2100, H01L 2102, H01L 21312, H01L 21314

Patent

active

049406736

ABSTRACT:
The invention relates to a method of manufacturing a semiconductor device, in which methylated silyloxy groups are formed on a silicon oxide layer which protects a PN junction, the methylated silyloxy groups being formed to reduce the leakage current of the device.
The method employs a solution in which an amine is present which is at least di-substituted.

REFERENCES:
patent: 4564562 (1986-01-01), Wong
patent: 4626556 (1986-12-01), Nozue et al.
patent: 4723978 (1988-02-01), Clodgo et al.
Plueddemann, E., "Silylating Agents", Encyclopedia of Chemical Tech., 3rd Ed., vol. 21, pp. 962-973, Wiley & Sons, 1983.

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