Optical waveguides – Temporal optical modulation within an optical waveguide – Electro-optic
Reexamination Certificate
2006-11-14
2006-11-14
Bovernick, Rodney (Department: 2874)
Optical waveguides
Temporal optical modulation within an optical waveguide
Electro-optic
C385S129000, C385S014000
Reexamination Certificate
active
07136544
ABSTRACT:
High speed optical modulators can be made of a lateral PN diode formed in a strip loaded optical waveguide on a SOI or other silicon based substrate. A PN junction is formed at the boundary of the P and N doped regions. The depletion region at the PN junction overlaps with the center of a guided optical mode propagating through the waveguide. Electrically modulating a lateral PN diode causes a phase shift in an optical wave propagating through the waveguide. Due to differences in fabrication methods, forming strip loaded waveguides with consistent properties for use in PN diode optical modulators is much easier than fabricating similar rib waveguides.
REFERENCES:
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patent: 6298177 (2001-10-01), House
patent: 6912079 (2005-06-01), Liu
patent: 2006/0008223 (2006-01-01), Gunn et al.
patent: 0433552 (1991-06-01), None
A. Vonsovici et al. Numerical simulation of a silicon-on-insulator waveguide structure for phase modulation at 1.3 um. Journal of Lightwave Technology, vol. 17 No. 1, pp. 129-135, Jan. 1999.
Gunn III Lawrence C.
Koumans Roger
Li Bing
Li Guo Liang
Pinguet Thierry J.
Bovernick Rodney
Fernandez & Associates LLP
Luxtera Inc.
Stahl Mike
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