PN diode optical modulators fabricated in rib waveguides

Details PN diode optical modulators fabricated in rib waveguides PN diode optical modulators fabricated in rib waveguides

2006-10-03

2006-10-03

Palmer, Phan (Department: 2874)

Optical waveguides

Integrated optical circuit

C385S003000, C257S499000

Reexamination Certificate

active

07116853

ABSTRACT:
High speed optical modulators can be made of a reverse biased lateral PN diode formed in a silicon rib optical waveguide disposed on a SOI or other silicon based substrate. A PN junction is formed at the boundary of the P and N doped regions. The depletion region at the PN junction overlaps with the center of a guided optical mode propagating through the waveguide. Electrically modulating a reverse biased lateral PN diode causes a phase shift in an optical wave propagating through the waveguide. Prior art forward biased PN and PIN diode modulators have been relatively low speed devices.

REFERENCES:
patent: 6298177 (2001-10-01), House

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