Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2005-04-19
2005-04-19
Graybill, David E. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S262000, C257S288000, C257S327000, C257S335000, C257S369000, C438S197000, C438S368000
Reexamination Certificate
active
06881987
ABSTRACT:
The present invention provides a p-channel metal-oxide-semiconductor (pMOS) device having an ultra shallow epi-channel satisfying a high doping concentration required for a device of which gate length is about 30 nm even without using a HALO doping layer and a method for fabricating the same. The pMOS device includes: a semiconductor substrate; a channel doping layer being formed in a surface of the semiconductor substrate and being dually doped with dopants having different diffusion rates; a silicon epi-layer being formed on the channel doping layer, whereby constructing an epi-channel along with the channel doping layer; a gate insulating layer formed on the silicon epi-layer; a gate electrode formed on the gate insulating layer; a source/drain extension region highly concentrated and formed in the semiconductor substrate of lateral sides of the epi-channel; and a source/drain region electrically connected to the source/drain extension region and deeper than the source/drain region.
REFERENCES:
patent: 5786620 (1998-07-01), Richards, Jr. et al.
patent: 5917219 (1999-06-01), Nandakumar et al.
patent: 6365475 (2002-04-01), Cheng et al.
patent: 6686630 (2004-02-01), Hanafi et al.
Graybill David E.
Hynix / Semiconductor Inc.
Marshall & Gerstein & Borun LLP
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