PMOS based LVTSCR and IGBT-like structure

Details PMOS based LVTSCR and IGBT-like structure PMOS based LVTSCR and IGBT-like structure

2006-06-06

2006-06-06

Baumeister, B. William (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Device protection

C257S133000

Reexamination Certificate

active

07057215

ABSTRACT:
In an ESD protection device making use of a LVTSCR-like structure or an IGBT-like structure, negative polarity over-voltage protection is achieved by providing a LVTSCR-like structure or IGBT-like structure that defines a PMOS device.

REFERENCES:
patent: 6255704 (2001-07-01), Iwata et al.
patent: 6531741 (2003-03-01), Hargrove et al.
patent: 2002/0163009 (2002-11-01), Ker et al.

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