Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – Having specific type of active device
Reexamination Certificate
2007-04-26
2011-12-27
Menz, Douglas (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
Having specific type of active device
C257S288000
Reexamination Certificate
active
08084787
ABSTRACT:
Semiconductor devices (102) and fabrication methods (10) are provided, in which a nitride film (130) is formed over NMOS transistors to impart a tensile stress in ail or a portion of the NMOS transistor to improve carrier mobility. The nitride layer (130) is initially deposited over the transistors at low temperature with high hydrogen content to provide a moderate tensile stress in the semiconductor body prior to back-end processing. Subsequent back-end thermal processing reduces the film hydrogen content and causes an increase in the applied tensile stress.
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Bu Haowen
Grider Douglas T.
Khamankar Rajesh
Brady III Wade J.
Garner Jacqueline J.
Menz Douglas
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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