Plurality of power elements with gate interconnections...

Details Plurality of power elements with gate interconnections... Plurality of power elements with gate interconnections...

2005-03-29

2005-03-29

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Insulating material

C257S724000, C257S729000

Reexamination Certificate

active

06873042

ABSTRACT:
Power semiconductor devices, and particularly a power semiconductor device which contains a plurality of power semiconductor elements. The power semiconductor device capable of reducing differences in impedance caused by differences in length among wire interconnections, facilitating the electric connection between main circuit terminals and the outside, and lightening restrictions on the number and layout of the power semiconductor elements installed. In the power semiconductor device, a rectangular-loop-shaped interconnection board is disposed above a bottom substrate to cover an area above edges of the bottom substrate, with an opening above the center part of the bottom substrate. A main collector electrode terminal and a main emitter electrode terminal pass through the opening to protrude from an opening of a resin case so that they can be electrically connected to the outside. Control emitter pads and gate pads are electrically connected to the control emitter electrodes and the gate terminals through wire interconnections of equal length.

REFERENCES:
patent: 5929519 (1999-07-01), Mori et al.
patent: 5942797 (1999-08-01), Terasawa
patent: 5966291 (1999-10-01), Baumel et al.
patent: 6060772 (2000-05-01), Sugawara et al.
patent: 772235 (1997-05-01), None

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