Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1993-06-09
1995-08-08
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257758, 257767, 257536, 257310, H01L 2348, H01L 2940, H01L 2702, H01L 2968
Patent
active
054401747
ABSTRACT:
A method consists of the steps of depositing a Ti--Pt metal film on a SiN layer insulation film mounted on GaAs substrate, etching the Ti--Pt metal film to form a first metal layer, depositing a SrTiO.sub.3 insulating film, etching the SrTiO.sub.3 insulating film to form an insulating film, depositing a WSiN metal film according to a sputtering technique while controlling a deposition pressure of nitrogenous gas, etching the WSiN metal film to simultaneously form a second metal layer on the insulating film and a thin metal film resistive element on the SiN layer insulation film, depositing a SiO.sub.2 passivation film, and making via holes. SrTiO.sub.3 has a high relative dielectric constant, and WSiN has a high melting point. Nitrogen atoms in WSiN prevent oxygen atoms in the insulating film from diffusing into the second metal layer. The adhesion of second metal film to the insulating film is tight because of the sputtering technique. The resistance of the thin metal film resistive element is stable because of nitrogen atoms strongly bonded to tungsten atoms and silicon atoms.
REFERENCES:
patent: 3138744 (1964-06-01), Kilby
patent: 3289093 (1966-11-01), Wanlass
patent: 3655544 (1972-04-01), Rairden, III
patent: 3781610 (1973-12-01), Bodway
patent: 4335505 (1982-06-01), Shibata et al.
patent: 4458295 (1984-07-01), Durschlag et al.
patent: 4786612 (1988-11-01), Yan et al.
patent: 4876176 (1989-10-01), Calviello et al.
patent: 4891684 (1990-01-01), Nishioka et al.
patent: 5068694 (1991-11-01), Ohara
patent: 5187557 (1993-02-01), Zenke
patent: 5187638 (1993-02-01), Sandhu et al.
patent: 5310695 (1994-05-01), Suzuki
"RF Sputtered Strontium Titanate Films" by W. B. Pennebaker; IBM J. Res. Develop. Nov. 1969; pp. 686-695.
Arroyo Teresa M.
Hille Rolf
Matsushita Electric - Industrial Co., Ltd.
LandOfFree
Plurality of passive elements in a semiconductor integrated circ does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Plurality of passive elements in a semiconductor integrated circ, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plurality of passive elements in a semiconductor integrated circ will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-973469