Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Patent
1991-09-10
1993-02-09
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
257442, 257448, 257446, 257441, 257466, H01L 2714
Patent
active
051856484
ABSTRACT:
An infrared detector device for at least two wavelengths, i.e. 3 to 5 microns and 8 to 14 microns, comprises detector elements (10 and 20) formed in two or more infrared-sensitive materials with different badgaps, e.g. in cadmium mercury telluride. These materials may be provided side-by-side in a single level on a substrate (3) or preferably as different levels (1 and 2) on the substrate (3). Each detector element (10 and 20) comprises a p-n junction (11 and 21) between opposite conductivity type regions (12,13 and 22,23). Electrical connections (15,25,24) extend from these regions to the substrate (3). Freedom in design and fabrication is obtained by a connection structure in which one connection (25) of the longer-wavelength response element (20) contacts both the semiconductor material (2) of that element (20) and the larger-bandgap material (1) of the shorter-wavelength response element (10), at a side-wall (42) of both materials. The larger-bandgap material (1) comprises a further region (18) which adjoins the side-wall (42) and which forms a further p-n junction (19) electrically in parallel with the p-n junction (21) of the longer-wavelength detector element (20).
REFERENCES:
patent: 4521798 (1985-06-01), Baker
patent: 4639756 (1987-01-01), Rosbeck et al.
patent: 4956686 (1990-09-01), Borrello et al.
patent: 4972244 (1990-11-01), Buffet et al.
patent: 4996579 (1991-02-01), Chu
Baker Ian M.
Dunn William A. E.
Botjer William L.
Mintel William
U.S. Philips Corp.
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