Plural source follower amplifier

Amplifiers – With semiconductor amplifying device – Including field effect transistor

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Details

330310, H03F 316

Patent

active

050830953

ABSTRACT:
An amplifier having improved input impedance and reduced susceptibility to power supply ripple, particularly suited for use with a high impedance signal source, utilizes at least two field-effect transistors; the signal source is connected to the gate of the first FET, which is connected to a reference potential by a high resistance, whereas the source electrode of the first FET is connected to the reference potential (usually ground) through a much smaller load resistance and is also connected to the gate of the second FET. The source of the second FET is connected to the drain of the first FET and the drain of the second FET is connected to a power source, usually a low voltage source.

REFERENCES:
patent: 3801933 (1974-04-01), Teare
patent: 3927383 (1975-12-01), Fjarlie et al.
patent: 4063050 (1977-12-01), Carlson et al.
patent: 4151480 (1979-04-01), Carlson et al.

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