Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – Specified materials
Reexamination Certificate
2005-05-10
2005-05-10
Lee, Hsien Ming (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
Specified materials
C257S616000, C257S751000, C257S763000, C438S653000, C438S656000, C438S672000, C438S685000
Reexamination Certificate
active
06891244
ABSTRACT:
A manufacturing method of a plug structure having low contact resistance includes the following steps. First, a silicon substrate and a BPSG layer covering thereon are provided. The silicon substrate has a dopant area. Next, the BPSG layer is etched to form a contact window to be contiguous with the dopant area. If the dopant area is doped with boron, a silicon-germanium layer is formed upon the dopant area as a barrier layer. Then, a barrier layer is formed next to the contact window, and a metal plug surrounded by the barrier layer is formed. After conductive interconnecting lines are formed upon the BPSG layer, a rapid thermal annealing is adopted to reactivate the dopant area. In the case that the boron is doped in the dopant area, the silicon-germanium layer keeps the boron from migrating to the barrier layer to lower the contact resistance of the plug structure.
REFERENCES:
patent: 5700717 (1997-12-01), Nowak et al.
patent: 5817572 (1998-10-01), Chiang et al.
patent: 04-196420 (1992-07-01), None
Dickinson Wright PLLC
Lee Hsien Ming
Winbond Electronics Corporation
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