Platinum thin film resistance element and production method ther

Details Platinum thin film resistance element and production method ther Platinum thin film resistance element and production method ther

1981-03-30

1983-08-02

Reynolds, B. A.

Electrical resistors

Resistance value responsive to a condition

Gas, vapor, or moisture absorbing or collecting

338308, 338 22SD, 338195, 204192F, 73 27R, H01C 1012

Patent

active

043968996

ABSTRACT:
A platinum thin film is formed by sputtering platinum onto an insulating substrate and heat aging the platinum thin film in a stairstep manner. A kerf is formed in the platinum thin film to produce a desired resistance, and a metal oxide semiconductor film is thereafter deposited on the platinum thin film to produce a gas sensor.

REFERENCES:
patent: 2357473 (1941-06-01), Jira
patent: 3699803 (1972-10-01), Sumi et al.
Okuma et al., "Newly-Developed LP-Gas Sensor", Toshiba Review, No. 118, (Nov.-Dec. 1978), pp. 31-33.

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