Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1991-12-17
1992-11-10
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257452, 257455, 257627, H01L 2714
Patent
active
051631792
ABSTRACT:
Platinum Silicide (PtSi) layers formed on silicon substrates are well known for their ability to image in the infrared portion of the electromagnetic spectrum out to 5.75 micrometers. The detectors are formed on p-type silicon substrates of <100> orientation. This is the preferred crystal structure for silicon when used for fabrication of Very Large Scale Integration (VLSI). The cooling required for these devices is 77.degree. K., which is needed to reduce thermal currents in the diodes to be significantly below the infrared generated signal. Detector array operation at these temperatures does not allow for operation in space for extended missions because a closed cycle mechanical cooler must be used. We have developed a new PtSi detector which must be fabricated on p-type silicon having a <111> crystal orientation. The detectors have been measured for their cutoff wavelength and barrier height is 0.310 eV which translates to a cutoff wavelength of 4.0 micrometers. The cooling required to operate these new devices is 110.degree. K. This means that they can be used in space applications where passive cooling is required.
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Kimata et al., "A 512.times.512-Element PtSi Schottky-Barrier Infrared Image Sensor," IEEE Journal of Solid-State Circuits, vol. SC-22, No. 6, Dec. 1987, pp. 1124-1129.
Auton William G.
Mintel William
Singer Donald J.
The United States of America as represented by the Secretary of
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