Platinum diffusion process

Details Platinum diffusion process Platinum diffusion process

1989-09-21

1990-05-15

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437192, 437200, 437 6, H01L 2172

Patent

active

049258125

ABSTRACT:
Platinum atoms are uniformly dispersed throughout a silicon wafer containing preformed junctions by depositing a layer of platinum on a clean silicon surface and thereafter immediately heating the wafer to about 500.degree. C. to form platinum silicide. Alternatively, a layer of palladium may be deposited on the surface of the wafer, a layer of platinum is deposited atop the palladium and the wafer is heated to form a palladium silicide with platinum atoms uniformly dispersed throughout the silicide layer. The wafer is heated to about 900.degree. C. for a short time which is sufficiently high to cause the platinum atoms to diffuse into the silicon wafer but is too low and lasts for too short a time to cause the movement of the preformed junctions within the wafer.

REFERENCES:
patent: 3640783 (1972-02-01), Bailey
patent: 3963523 (1976-06-01), Tanaka et al.
patent: 4206540 (1980-06-01), Gould
patent: 4322453 (1982-03-01), Miller
patent: 4398344 (1983-08-01), Gould
patent: 4777149 (1988-10-01), Tanabe et al.
patent: 4855799 (1989-08-01), Tanabe

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