Platinum-cobalt alloy sputtering target and method for manufactu

Details Platinum-cobalt alloy sputtering target and method for manufactu Platinum-cobalt alloy sputtering target and method for manufactu

1992-06-25

1994-02-01

Weisstuch, Aaron

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

2041922, 148674, 148678, 420435, 420436, 420439, 420466, 420468, C23C 1434, C22C 1907

Patent

active

052829464

ABSTRACT:
A sputtering target of platinum-cobalt alloy is disclosed which contains 10 to 55% by weight of platinum; 1 to 15% by weight of a first additional element selected from the group consisting of nickel and tantalum; no more than 1.5% by weight of a second additional element selected from the group consisting of boron, titanium, lanthanum, cerium, neodymium, beryllium, calcium, zirconium, and silicon; no more than 20% by weight of chromium; and balance cobalt. A method for manufacturing the sputtering target is also disclosed. In the method, a platinum-cobalt alloy containing specific ingredients in predetermined amounts is first prepared. Then, the platinum-cobalt alloy is subjected to hot plastic working with a thickness reduction of no less than 30%. Subsequently, the alloy thus hot worked is subjected to a cold plastic working with a thickness reduction of no less than 5% at a temperature less than the recrystallization temperature of the alloy.

REFERENCES:
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patent: 4832810 (1989-05-01), Nakamura et al.
patent: 5004652 (1991-04-01), Lal et al.
patent: 5112468 (1992-05-01), Weigert et al.
patent: 5180640 (1993-01-01), Yamashita et al.
Patent Abstracts of Japan, vol. 12, No. 405, Oct. 26, 1988, JP-A-63-143258, Masatoshi Fukushima, "Sputtering Target".

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