Platinum capacitor MOS memory having lattice matched PZT

Details Platinum capacitor MOS memory having lattice matched PZT Platinum capacitor MOS memory having lattice matched PZT

1991-05-30

1992-03-24

James, Andrew J.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 235, 365147, 365145, 365149, H01L 2702, H01L 2968

Patent

active

050993054

ABSTRACT:
Non-volatile memories each employing a ferroelectric capacitor composed of a ferroelectric film formed on a diffused layer serving as a source or a drain. A lower electrode is composed mainly of a metal, while the ferroelectric film is connected to a high-concentration diffused layer at a contact hole. Formed on the high-concentration diffused layer is a refractory metal silicide on which to form the ferroelectric substance film.

REFERENCES:
patent: 3832700 (1974-08-01), Wu et al.
patent: 4149302 (1979-04-01), Cook
patent: 4167018 (1979-09-01), Ohba et al.
patent: 4873664 (1989-10-01), Eaton, Jr.
patent: 4888630 (1989-12-01), Patterson
patent: 4931847 (1990-06-01), Gorda

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