Platinum and platinum silicide contacts on .beta.-silicon carbid

Details Platinum and platinum silicide contacts on .beta.-silicon carbid Platinum and platinum silicide contacts on .beta.-silicon carbid

1993-12-13

1995-11-28

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257455, 257472, 257473, 257485, 257486, H01L 2948

Patent

active

054710723

ABSTRACT:
Gold, which is the commonly used metallization on .beta.-silicon carbide, is known to degrade at temperatures above 450.degree. C. It also exhibits poor adhesion to silicon carbide. Schottky contacts with platinum metallization have rectifying characteristics similar to contacts with gold metallization. The platinum Schottky contacts remain stable up to 800.degree. C. Adhesion of the platinum deposited at slightly elevated temperatures is also superior to that for gold. Platinum provides a metallization that is physically more rugged and thermally more stable than conventional gold metallization.

REFERENCES:
patent: 4170818 (1979-10-01), Tobey et al.
patent: 4513309 (1985-04-01), Cricchi
patent: 4614961 (1986-09-01), Khan et al.
Ioannou et al--IEEE Transactions on Electron Devices vol. ED-34, No. 8, A 1987.

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