Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Encapsulating
Reexamination Certificate
2011-03-09
2011-11-15
Wagner, Jenny L (Department: 2891)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Encapsulating
C257SE23127
Reexamination Certificate
active
08058110
ABSTRACT:
The plating method comprises the step of forming a resin layer10over a substrate16; the step of cutting the surface part of the resin layer10with a cutting tool12; the step of forming a seed layer36on the resin layer10by electroless plating; and the step of forming a plating film44on the seed layer36by electroplating. Suitable roughness can be give to the surface of the resin layer10, whereby the adhesion between the seed layer36and the resin layer10can be sufficiently ensured. Excessively deep pores are not formed in the surface of the resin layer10as are by desmearing treatment, whereby a micronized pattern of a photoresist film40can be formed on the resin layer10. Thus, interconnections44, etc. can be formed over the resin layer10at a narrow pitch with high reliability ensured.
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Baniecki John David
Kurihara Kazuaki
Mizukoshi Masataka
Nakagawa Kanae
Shioga Takeshi
Fujitsu Limited
Wagner Jenny L
Westerman, Hottori, Daniels & Adrian, LLP
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