Plating method and apparatus using contactless electrode

Details Plating method and apparatus using contactless electrode Plating method and apparatus using contactless electrode

2005-02-15

2005-02-15

Koehler, Robert R. (Department: 1775)

Electrolysis: processes, compositions used therein, and methods

Electrolytic coating

C204S193000, C204S212000, C205S089000, C205S137000, C205S143000, C205S147000, C205S148000, C205S652000, C205S799000

Reexamination Certificate

active

06855239

ABSTRACT:
A plating method and apparatus using contactless electrode is described. In one embodiment an inductive element is placed proximally to a substrate and a moving electromagnetic field generates an emf in the substrate to plate the surface. In another embodiment, a conductive plate is used, so that the conductive plate and the wafer, separated by a dielectric material, operate as two plates of a capacitor when voltage is applied to the conductive plate. The resulting electrostatic field impresses a charge potential on the substrate to plate the surface of the substrate.

REFERENCES:
patent: 6132586 (2000-10-01), Adams et al.
patent: 6270646 (2001-08-01), Walton et al.
patent: 6328872 (2001-12-01), Talieh et al.
U.S. Patent Application Publication US 2001/0035354 A1 entitled “Method and Apparatus for Making Electrical Contact to Wafer Surface For Full-Face Electroplating or Electropolishing”, Nov. 2001.
Yih, Paul H. et al., “Extending Copper Electroplating to 0.035 Micron Manufacture Node: Plating CU on Ultra Thin Seed” ACM Research Inc., Fremont, CA, no date.

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