Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-10-18
2005-10-18
Nhu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C428S690000, C428S692100, C428S690000, C428S690000, C428S666000, C428S667000, C428S678000
Reexamination Certificate
active
06956233
ABSTRACT:
In plating on an Si substrate, it has been strongly demanded to apply a treatment for providing an excellent adhesion so as to resist a post-processing such as polishing and for facilitating plating. Then, provided is a plated substrate adapted for hard disk medium comprising an Si single crystal; an amorphous layer on the substrate, the amorphous layer having thickness of 2 to 200 nm and containing Si and one or more metals selected from a group consisting of Ni, Cu and Ag; a multicrystal layer on the amorphous layer, the multicrystal layer having thickness of 5 to 1000 nm and containing Si and one or more metals selected from a group consisting of Ni, Cu and Ag. Moreover, provided is a method for manufacturing a plated substrate adapted for hard disk medium comprising steps of applying a chemical etching treatment of a natural oxide film and a surface Si portion on an Si single crystal substrate; and forming a film on the etched surface of the substrate in a sulfate or hydrochloride bath containing no reductant within a pH range of 7.2 to 12.8 at liquid temperature of 70 to 100° C.
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Hamaguchi Yu
Ishii Masatoshi
Jyoko Yukimi
Shinya Naofumi
Tsumori Toshihiro
Myers Bigel & Sibley Sajovec, PA
Nhu David
Sin-Etsu Chemical Co., Ltd.
Tran Mai-Huong
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