Plated copper interconnect structure

Details Plated copper interconnect structure Plated copper interconnect structure

1997-05-15

1999-10-19

Everhart, Caridad

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257768, 257769, 257753, 438687, 438685, 438648, 438656, H01L 2945

Patent

active

059694220

ABSTRACT:
A high conductivity interconnect structure is formed by electroplating or electroless plating of Cu or a Cu-base alloy on a seed layer comprising an alloy of a catalytically active metal, such as Cu, and a refractory metal, such as Ta. The seed layer also functions as a barrier/adhesion layer for the subsequently plated Cu or Cu-base alloy. Another embodiment comprises initially depositing a refractory metal barrier layer before depositing the seed layer.

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