Plate type member for semiconductor device package and package

Details Plate type member for semiconductor device package and package Plate type member for semiconductor device package and package

1996-06-27

1999-11-23

Arroyo, Teresa M.

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Insulating material

257762, 257763, H01L 2310, H01L 2348, H01L 2352

Patent

active

059905484

ABSTRACT:
A plate type member of a Cu--W and/or Mo alloy can be bonded to a ceramic member or the like to form a semiconductor device package without problems, because the degree of warping of the plate type member during a heating step in its fabrication is suppressed. In the plate type member consisting of a Cu--W and/or Mo alloy, including a small amount of alkaline earth metal impurity the difference between alkaline earth metal contents in upper and lower halves of the member along the thickness direction is not more than 10 ppm, or delete "an alkaline earth" preferably not more than 5 ppm relative to the content of W and/or Mo. This plate type member is manufactured by reducing the alkaline earth metal content in W and/or Mo raw material powder, or standing a skeleton vertically upright on a refractory plate for carryiing out Cu infiltration, and performing homogeneous heating and cooling replace during the manufacturing thereby preventing maldistribution of the alkaline earth metal.

REFERENCES:
patent: 4680618 (1987-07-01), Kuroda et al.
patent: 4877577 (1989-10-01), Futatsuka et al.
patent: 4965659 (1990-10-01), Sasame et al.
patent: 5015803 (1991-05-01), Mahulikar et al.
patent: 5334346 (1994-08-01), Kim et al.

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