Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame
Patent
1993-09-08
1994-10-18
Nguyen, Viet Q.
Active solid-state devices (e.g., transistors, solid-state diode
Lead frame
257668, 257669, 257670, 257675, 257676, H01L 2350, H01L 2348
Patent
active
053571398
ABSTRACT:
In a package for DRAM, plastic is included between the common signal inner leads (bus bar inner leads) and insulating films arranged in the central part of a semiconductor chip. Thus, the deformation of plastic at the upper edge of the common signal inner leads is reduced and no great stress is generated at this portion. Accordingly, plastic cracking can be prevented.
REFERENCES:
patent: 4445271 (1984-05-01), Grabbe
patent: 4862245 (1989-08-01), Pashby et al.
patent: 4862246 (1989-08-01), Masuda et al.
patent: 4916519 (1990-04-01), Ward
patent: 4951122 (1990-08-01), Tsubosaki et al.
patent: 4984065 (1991-01-01), Sako
patent: 5032895 (1991-07-01), Horiuchi et al.
"Thin Small Outline Package", IBM TDB, vol. 34, No. 1, Jun. 1991, pp. 358-359.
William Ward, "Volume Production of Plastic Modules for Dram Chip by Area Wire Bond Techniques", IBM, IEEE, 1988, pp. 552-557.
Anjoh Ichiro
Kitano Makoto
Kohno Ryuji
Murakami Gen
Nishimura Asao
Hitachi , Ltd.
Nguyen Viet Q.
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