Active solid-state devices (e.g. – transistors – solid-state diode – Encapsulated
Patent
1994-07-21
1996-06-04
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Encapsulated
257723, 257779, 257706, H01L 2328, H01L 2334, H01L 2310
Patent
active
055236294
ABSTRACT:
An encapsulated microelectronic device (100 ) including a base (101) and a semiconductor device (305) having a top and a bottom. The bottom is attached to the base (101). The semiconductor device (105) has a thickness in the range from one-fourth to three-fourths of a millimeter and has a bottom metallization consisting of aluminum (407)/chromium (405)
ickel (403)/gold (401). The semiconductor device (305) has a contact (115) attached to the top. The encapsulated microelectronic device (100) has a molded top (120) surrounding the semiconductor device (305 ). The molded top (120) is made from low stress molding material.
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Lewis, Merion, "SAW Filters Employing Interdigitated Interdigital Transducers, IIDT", Royal Signals and Radar Establishment, Malvern, Worcestershire, United Kingdon, 1982 Ultrasonics Symposium, pp. 12-17.
Anderson Samuel J.
Baird John
Kalfus Martin A.
Clark S. V.
Crane Sara W.
Motorola Inc.
Neel Bruce T.
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