Plasma vapor deposition of an improved passivation film using el

Details Plasma vapor deposition of an improved passivation film using el Plasma vapor deposition of an improved passivation film using el

1987-11-20

1989-09-12

Hearn, Brian E.

Fishing, trapping, and vermin destroying

427 39, 437171, 437173, 437241, 148DIG114, H01L 2702

Patent

active

048660035

ABSTRACT:
For enhancement of device stability, there is disclosed a semiconductor device fabricated on a semiconductor substrate comprising (a) source and drain regions formed in a surface portion of the semiconductor substrate and spaced from each other by a channel region, (b) a gate insulating film formed on the channel region, (c) a gate electrode structure formed on the gate insulating film, and (d) a passivation film of an insulating material covering the gate electrode structure and containing hydrogen-bonded-silicons equal in number to or less than 5.times.10.sup.21 per cm.sup.3, and the unstable hydrogen-bonded-silicons are decreased in number so that the semiconductor device only have a decreased trap density which results in stable operation.

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patent: 4599137 (1986-07-01), Akiya
Fujita et al., "Silicon Nitride Films by Plasma-CVD From SiH.sub.4 -N.sub.2 -H.sub.2 Gas Mixtures", IEDM, pp. 630-633 (1984).
Fujita et al., "Trap Generation in Gate Oxide Layer of MOS Structures Encapsulated by Silicon Nitride", IEDM, pp. 64-67 (1985).

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