Plasma vapor deposition apparatus

Details Plasma vapor deposition apparatus Plasma vapor deposition apparatus

1994-08-22

1995-12-12

Breneman, R. Bruce

Coating apparatus

Gas or vapor deposition

With treating means

118723EB, 118718, 118719, 118725, 20429805, C23C 1600

Patent

active

054746116

ABSTRACT:
A plasma vapor deposition apparatus which can form high-quality films of ITO, for example, with high productivity, includes a vapor deposition chamber, a drive and a horizontally rotating circular holding plate connected to the drive located in a lower portion of the chamber, the circular holding plate having a circular vapor source material mounting centered at the rotational axis about which the plate is rotated by the drive, and coil-shaped electrodes for exciting vapor produced by evaporating the vapor source material. A film thickness correcting plate is interposed between the holding plate and the path along which the substrate is transported through the chamber by a transporting device. This plate is configured to so shield a portion of the substrate so that an excess of excited vapor particles do not accumulate at a given site on the surface of the substrate. Moreover, independently evacuatable evacuating sections are provided upstream and downstream of the vapor deposition chamber to constitute a processing line. The transporting device transports the substrate continuously along a first path through the processing line from an inlet section to an outline section. On the other hand, a return mechanism returns the substrate from the outlet section to the inlet section along a second path disposed above the first path.

REFERENCES:
patent: 3962988 (1976-06-01), Murayama et al.
patent: 4392451 (1983-07-01), Mickelsen et al.
patent: 4416217 (1983-11-01), Nakamura et al.

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