Plasma treatment to improve barrier layer performance over...

Details Plasma treatment to improve barrier layer performance over... Plasma treatment to improve barrier layer performance over...

2007-02-13

2007-02-13

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C257SE21001

Reexamination Certificate

active

10936272

ABSTRACT:
A method for plasma treating an etched opening formed in a porous low-K material to improve barrier layer integrity including providing a substrate comprising an etched opening formed in an insulating dielectric layer including porous low-K silicon oxide according to an overlying patterned resist layer; plasma treating according to a plasma process the etched opening to remove the resist layer and increase a surface density of the insulating dielectric layer within the etched opening; and, blanket depositing a barrier layer over the etched opening.

REFERENCES:
patent: 6537896 (2003-03-01), Catabay et al.
patent: 6673721 (2004-01-01), Kim et al.
patent: 6933246 (2005-08-01), Buchanan et al.
patent: 2001/0045651 (2001-11-01), Saito et al.

Affiliated with

Also associated with

Rating

Plasma treatment to improve barrier layer performance over... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma treatment to improve barrier layer performance over..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma treatment to improve barrier layer performance over... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3821544