Plasma treatment system

Details Plasma treatment system Plasma treatment system

1997-07-29

1999-11-23

Breneman, Bruce

Coating apparatus

Gas or vapor deposition

With treating means

118723E, 118723ME, 118723ER, 156345, C23C 1600

Patent

active

059881046

ABSTRACT:
The present invention provides a plasma treatment system having a reaction chamber in which a plasma is generated to be irradiated onto a sample held on a sample holder in the reaction chamber. The reaction chamber has a top covered by a dielectric plate. The plasma treatment system also has an opposite electrode having a plurality of windows through which microwave is transmitted into the reaction chamber for causing the plasma, wherein the opposite electrode is provided over a top surface of the dielectric plate so that the opposite electrode is separated by the dielectric plate from the plasma generated in the reaction chamber.

REFERENCES:
patent: 5173641 (1992-12-01), Imahashi et al.
patent: 5342472 (1994-08-01), Imahashi et al.
patent: 5614025 (1997-03-01), Akimoto
patent: 5639309 (1997-06-01), Akimoto
patent: 5685949 (1997-11-01), Yashima
patent: 5698036 (1997-12-01), Ishii et al.
patent: 5858162 (1999-01-01), Kubota
H. Mabuchi et al., "Surface-Wave-Coupled-Plasma for Anisotropic Etching", pp. 235-240, 1994 Dry Process Symposium.
Takeshi Akimoto et al., "Oxide Etching Using Surface Wave Coupled Plasma", pp. 7037-7041, Jpn. J. Appl. Phys. vol. 33, Part 1, No. 12B, Dec. 1994.

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