Plasma treatment system

Details Plasma treatment system Plasma treatment system

1985-07-01

1987-08-04

Smith, John D.

Coating apparatus

Gas or vapor deposition

118723, 118726, 427 38, 427 39, C23C 1600

Patent

active

046838384

ABSTRACT:
An insulator film can be formed at a low temperature without any damage to a substrate to be treated by a plasma in a plasma treatment system which comprises a magnetron for generating a microwave, an isolator for isolating a wave guide from the magnetron, a discharge tube for generating a plasma, the wave guide for leading the microwave from the magnetron to the discharge tube, a vacuum chamber integrally formed together with the discharge tube, an evaporation source provided in the vacuum chamber, a substrate to be treated and provided at a position to sandwich a stream of the plasma between the substrate and the evaporation source, electromagnets provided around the discharge tube and the vacuum chamber, and a manipulator for manipulating the substrate, the electromagnets generating a magnetic field to confine the stream of the plasma.

REFERENCES:
patent: 4217374 (1980-08-01), Ovshinsky
patent: 4401054 (1983-08-01), Matsuo
patent: 4481229 (1984-11-01), Suzuki
patent: 4483725 (1984-11-01), Chang
patent: 4514437 (1985-04-01), Nath
patent: 4516525 (1985-05-01), Bourgeois
patent: 4610770 (1986-09-01), Saito
P. C. Karr "Vacuum Deposition of Material Films on Substrates Utilizing Controlled Plasma", IBM Technical Disclosure Bulletin, vol. 19, No. 5, Oct. 1976, pp. 1518-1520.

Affiliated with

Also associated with

Rating

Plasma treatment system does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma treatment system, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma treatment system will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-878064