Coating apparatus – Gas or vapor deposition – With treating means
Patent
1992-03-11
1994-07-19
Pal, Asok
Coating apparatus
Gas or vapor deposition
With treating means
C23C 1650, C23C 1654
Patent
active
053305787
ABSTRACT:
A plasma gaseous reaction apparatus including a reaction chamber, a system for supplying reaction gas to the reaction chamber and an exhaust system for exhausting unnecessary reaction products. Specifically, the apparatus includes a pair of facing electrodes disposed in the reaction chamber which are covered by shields except the area in which the electrodes face each other. The shields may include a first and second shield wherein the inner first shield is electrically insulated from the electrodes and the outer second shield is kept at earth potential. The apparatus further includes a substrate container for supporting substrates which surrounds the substrates by a frame. The outside of the substrate container is kept in the earth potential and is covered by a conductor plate electrically insulated from the container. The shields and substrate container are configured such that plasma generated by electric power supplied by the electrodes is confined in a space surrounded by the shields and the container.
REFERENCES:
patent: 4582720 (1986-04-01), Yamazaki
patent: 4936251 (1990-06-01), Yamazaki et al.
patent: 4979467 (1990-12-01), Kamaji et al.
patent: 5113790 (1992-05-01), Geisler et al.
Abe Hisashi
Fukada Takeshi
Ichijo Mitsuhiro
Sakama Mitsunori
Pal Asok
Semiconductor Energy Laboratory Co,. Ltd.
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