Plasma treating apparatus and plasma treating method

Details Plasma treating apparatus and plasma treating method Plasma treating apparatus and plasma treating method

2005-07-26

2005-07-26

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C156S345420, C118S500000

Reexamination Certificate

active

06921720

ABSTRACT:
In a plasma treating apparatus for carrying out a plasma treatment over a silicon wafer6having a protective tape6astuck to a circuit formation face, the silicon wafer6is mounted on a mounting surface3dwhich is provided on an upper surface of a lower electrode3formed of a conductive metal with the protective tape6aturned toward the mounting surface3d. When a DC voltage is to be applied to the lower electrode3by a DC power portion18for electrostatic adsorption to adsorb and hold the silicon wafer6onto the lower electrode3in the plasma treatment, the protective tape6ais utilized as a dielectric for the electrostatic adsorption. Consequently, the dielectric can be thinned as much as possible and the silicon wafer6can be held by a sufficient electrostatic holding force.

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