Plasma treated metal silicide layer formation

Details Plasma treated metal silicide layer formation Plasma treated metal silicide layer formation

2011-03-08

2011-03-08

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Forming schottky junction

Using refractory group metal

C438S656000, C438S660000, C438S664000, C257SE21590, C257SE21593, C257SE23072

Reexamination Certificate

active

07902056

ABSTRACT:
Devices and methods for plasma treated metal silicide layer formation are disclosed. In one embodiment, a method for manufacturing a semiconductor device comprises forming a metal layer on a silicon substrate, exposing the metal layer to a plasma, and thermally treating the silicon substrate and the metal layer to form a metal silicide layer.

REFERENCES:
patent: 6127270 (2000-10-01), Hu et al.
patent: 6706626 (2004-03-01), Huang
patent: 6943071 (2005-09-01), Fazio et al.
patent: 7064067 (2006-06-01), King et al.
patent: 7479434 (2009-01-01), Kang et al.

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